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PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination 21 december 2012 product data sheet scan or click this qr code to view the latest information for this product 1. general description small-signal p-channel enhancement mode field-effect transistor (fet) using trench mosfet technology and ultra low v f maximum efficiency general application (mega) schottky diode combined in a small and leadless ultra thin dfn2020-6 (sot1118) surface-mounted device (smd) plastic package. 2. features and benefits ? 1.8 v r dson rated for low-voltage gate drive ? small and leadless ultra thin smd plastic package: 2 2 0.65 mm ? exposed drain pad for excellent thermal conduction ? integrated ultra low v f mega schottky diode 3. applications ? charging switch for portable devices ? dc-to-dc converters ? power management in battery-driven portables ? hard disk and computing power management 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit mosfet transistor v ds drain-source voltage - - -20 v v gs gate-source voltage t j = 25 c -12 - 12 v i d drain current v gs = -4.5 v; t amb = 25 c; t 5 s [1] - - -3.7 a schottky diode i f forward current t sp 105 c - - 2 a v r reverse voltage t amb = 25 c - - 20 v mosfet transistor static characteristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -2.7 a; t j = 25 c - 80 102 m
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 2 / 16 symbol parameter conditions min typ max unit schottky diode v f forward voltage i f = 1 a; t j = 25 c - 320 365 mv [1] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 a anode 2 n.c. not connected 3 d drain 4 s source 5 g gate 6 k cathode 7 k cathode 8 d drain t r a n s p a r e n t t o p v i e w 6 7 8 5 4 1 2 3 dfn2020-6 (sot1118) aaa-003667 g k a s d 6. ordering information table 3. ordering information package type number name description version PMFPB8032XP dfn2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm sot1118 7. marking table 4. marking codes type number marking code PMFPB8032XP 1x 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit mosfet transistor v ds drain-source voltage t j = 25 c - -20 v
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 3 / 16 symbol parameter conditions min max unit v gs gate-source voltage -12 12 v v gs = -4.5 v; t amb = 25 c; t 5 s [1] - -3.7 a v gs = -4.5 v; t amb = 25 c [1] - -2.7 a i d drain current v gs = -4.5 v; t amb = 100 c [1] - -1.7 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -11 a [2] - 485 mw t amb = 25 c [1] - 1100 mw p tot total power dissipation t sp = 25 c - 6250 mw source-drain diode i s source current t amb = 25 c [1] - -1.1 a schottky diode v r reverse voltage t amb = 25 c - 20 v i f forward current t sp 105 c - 2 a i frm repetitive peak forward current t p 1 ms; 0.25 ; t amb = 25 c - 7 a t p = 8 ms; t j(init) = 25 c; square wave - 18 a i fsm non-repetitive peak forward current t p = 8 ms; t j(init) = 25 c; half-sine wave [3] - 25 a [2] - 480 mw t amb = 25 c [1] - 1190 mw p tot total power dissipation t sp = 25 c - 6250 mw per device t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c [1] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [3] calculated from square-wave measurements.
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 4 / 16 t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 3 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. mosfet transistor: normalized total power dissipation as a function of junction temperature t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 4 4 0 8 0 1 2 0 i d e r ( % ) 0 fig. 2. mosfet transistor: normalized continuous drain current as a function of junction temperature 017aaa563 - 1 -10 - 1 -10 -10 2 i d (a) -10 - 2 v d s (v) -10 - 1 -10 2 -10 - 1 limit r dson = v d s / i d t p = 10 s t p = 100 s t p = 10 ms t p = 100 ms dc; t s p = 25 c dc; t amb = 25 c; drain mounting pad 6 cm 2 i dm = single pulse fig. 3. mosfet transistor: safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 5 / 16 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit mosfet transistor [1] - 225 260 k/w in free air [2] - 99 115 k/w r th(j-a) thermal resistance from junction to ambient in free air; t 5 s [2] - 54 62 k/w r th(j-sp) thermal resistance from junction to solder point - 16 20 k/w schottky diode [1] - - 260 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - - 105 k/w r th(j-sp) thermal resistance from junction to solder point - - 20 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 017aaa564 1 0 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 - 1 1 0 - 5 1 0 1 0 - 2 1 0 - 4 1 0 2 1 0 - 1 t p (s) 1 0 - 3 1 0 3 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, standard footprint fig. 4. mosfet transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 6 / 16 017aaa565 1 0 1 1 0 2 1 0 3 z th(j-a) (k/w) 1 0 - 1 1 0 - 5 1 0 1 0 - 2 1 0 - 4 1 0 2 1 0 - 1 t p (s) 1 0 - 3 1 0 3 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 fr4 pcb, mounting pad for drain 6 cm 2 fig. 5. mosfet transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 0 1 7 a a a 0 8 2 t p ( s ) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 1 0 3 z t h ( j - a ) ( k / w ) 1 d u t y c y c l e = 1 0 . 7 5 0 . 5 0 . 3 3 0 . 2 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 0 . 0 1 0 fr4 pcb, standard footprint fig. 6. schottky diode: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 7 / 16 0 1 7 a a a 0 8 3 t p ( s ) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 1 0 3 z t h ( j - a ) ( k / w ) 1 d u t y c y c l e = 1 0 . 7 5 0 . 5 0 . 3 3 0 . 2 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 0 . 0 1 0 fr4 pcb, mounting pad for cathode 6 cm 2 fig. 7. schottky diode: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit mosfet transistor static characteristics v (br)dss drain-source breakdown voltage i d = -250 a; v gs = 0 v; t j = 25 c -20 - - v v gsth gate-source threshold voltage i d = -250 a; v ds = v gs ; t j = 25 c -0.4 -0.6 -1 v v ds = -20 v; v gs = 0 v; t j = 25 c - - -1 a i dss drain leakage current v ds = -20 v; v gs = 0 v; t j = 150 c - - -10 a v gs = -12 v; v ds = 0 v; t j = 25 c - - -100 na i gss gate leakage current v gs = 12 v; v ds = 0 v; t j = 25 c - - 100 na v gs = -4.5 v; i d = -2.7 a; t j = 25 c - 80 102 m v gs = -4.5 v; i d = -2.7 a; t j = 150 c - 116 148 m v gs = -2.5 v; i d = -2.5 a; t j = 25 c - 95 125 m r dson drain-source on-state resistance v gs = -1.8 v; i d = -1.1 a; t j = 25 c - 120 156 m g fs transfer conductance v ds = -10 v; i d = -2.7 a; t j = 25 c - 15 - s mosfet transistor dynamic characteristics q g(tot) total gate charge - 5.7 8.6 nc q gs gate-source charge - 0.7 - nc q gd gate-drain charge v ds = -10 v; i d = -2.7 a; v gs = -4.5 v; t j = 25 c - 0.96 - nc
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 8 / 16 symbol parameter conditions min typ max unit c iss input capacitance - 550 - pf c oss output capacitance - 63 - pf c rss reverse transfer capacitance v ds = -10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 53 - pf t d(on) turn-on delay time - 6 - ns t r rise time - 14 - ns t d(off) turn-off delay time - 120 - ns t f fall time v ds = -10 v; i d = -2.4 a; v gs = -4.5 v; r g(ext) = 6 ; t j = 25 c - 50 - ns mosfet transistor source-drain diode v sd source-drain voltage i s = -1.1 a; v gs = 0 v; t j = 25 c - -0.8 -1.2 v schottky diode i f = 100 ma; t j = 25 c - 225 275 mv i f = 500 ma; t j = 25 c - 285 335 mv v f forward voltage i f = 1 a; t j = 25 c - 320 365 mv v r = 5 v; t j = 25 c - 65 220 a v r = 5 v; t j = 125 c - 13 50 ma v r = 10 v; t j = 25 c - 110 400 a i r reverse current v r = 20 v; t j = 25 c - 230 700 a c d diode capacitance v r = 5 v; f = 1 mhz; t j = 25 c - 60 70 pf v d s (v) 0 - 4 - 3 - 1 - 2 017aaa531 - 4 - 6 - 2 - 8 -10 i d (a) 0 v g s = - 1 . 8 v - 1 0 v - 4 . 5 v - 2 . 5 v - 2 v - 1 . 6 v - 1 . 5 v - 1 . 4 v - 1 . 2 v - 1 v t j = 25 c fig. 8. mosfet transistor: output characteristics: drain current as a function of drain-source voltage; typical values 017aaa532 -10 - 4 -10 - 3 i d (a) -10 - 5 v g s (v) 0 -1.00 -0.75 -0.25 -0.50 m i n t y p m a x t j = 25 c; v ds = -5 v fig. 9. mosfet transistor: subthreshold drain current as a function of gate-source voltage
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 9 / 16 i d (a) 0 - 4 - 3 - 1 - 2 017aaa533 0.10 0.15 0.05 0.20 0.25 r dson () 0 - 1 . 3 v v g s = - 1 . 4 v - 1 . 6 v - 1 . 8 v - 2 . 5 v - 4 . 5 v t j = 25 c fig. 10. mosfet transistor: drain-source on-state resistance as a function of drain current; typical values v g s (v) 0 - 4 - 3 - 1 - 2 017aaa534 0.2 0.1 0.3 0.4 r dson () 0 t j = 1 5 0 c t j = 2 5 c i d = -3 a fig. 11. mosfet transistor: drain-source on-state resistance as a function of gate-source voltage; typical values v g s (v) 0 -2.5 -2.0 -1.0 -1.5 -0.5 017aaa535 - 4 - 6 - 2 - 8 -10 i d (a) 0 t j = 1 5 0 c t j = 2 5 c v ds > i d r dson fig. 12. mosfet transistor: transfer characteristics: drain current as a function of gate-source voltage; typical values t j (c) -60 180 120 0 6 0 017aaa536 1.0 0.5 1.5 2.0 a 0 fig. 13. mosfet transistor: normalized drain-source on-state resistance as a function of junction temperature; typical values
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 10 / 16 t j (c) -60 180 120 0 6 0 017aaa537 -1.0 -0.5 -1.5 -2.0 v gs(th) (v) 0 m i n t y p m a x i d = -0.25 ma; v ds = v gs fig. 14. mosfet transistor: gate-source threshold voltage as a function of junction temperature 017aaa538 v d s (v) -10 - 1 -10 2 -10 - 1 1 0 2 1 0 3 c (pf) 1 0 c i s s c o s s c rss f = 1 mhz; v gs = 0 v fig. 15. mosfet transistor: input, output and reverse transfer capacitances as a function of drain- source voltage; typical values q g (nc) 0 1 2 9 3 6 017aaa539 - 4 - 8 -12 v g s (v) 0 i d = -3 a; v ds = -10 v; t amb = 25 c fig. 16. mosfet transistor: gate-source voltage as a function of gate charge; typical values 0 1 7 a a a 1 3 7 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 17. mosfet transistor: gate charge waveform definitions
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 11 / 16 v s d (v) 0 -1.4 -1.2 -0.4 -0.8 017aaa540 - 2 - 1 - 3 - 4 i s (a) 0 t j = 2 5 c t j = 1 5 0 c v gs = 0 v fig. 18. mosfet transistor: source current as a function of source-drain voltage; typical values v f ( v ) 0 . 0 1 . 0 0 . 8 0 . 4 0 . 6 0 . 2 0 1 7 a a a 0 8 4 1 0 - 2 1 0 - 1 1 0 - 3 1 1 0 i f ( a ) 1 0 - 4 ( 1 ) ( 2 ) ( 3 ) ( 4 ) ( 5 ) (1) t j = 150 c (2) t j = 125 c (3) t j = 85 c (4) t j = 25 c (5) t j = ?40 c fig. 19. schottky diode: forward current as a function of forward voltage; typical values 0 1 7 a a a 0 8 5 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 5 1 0 - 6 i r ( a ) 1 0 - 7 v r ( v ) 0 2 0 1 5 5 1 0 ( 1 ) ( 2 ) ( 3 ) ( 4 ) (1) t j = 125 c (2) t j = 85 c (3) t j = 25 c (4) t j = ?40 c fig. 20. schottky diode: reverse current as a function of reverse voltage; typical values v r ( v ) 0 2 0 1 5 5 1 0 0 1 7 a a a 0 8 6 1 0 0 1 5 0 5 0 2 0 0 2 5 0 c d ( p f ) 0 f = 1 mhz; t amb = 25 c fig. 21. schottky diode: diode capacitance as a function of reverse voltage; typical values
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 12 / 16 t a m b ( c ) 0 5 0 1 0 0 1 5 0 1 7 5 1 2 5 7 5 2 5 0 1 7 a a a 0 8 7 0 . 8 1 . 6 2 . 4 i f ( a v ) ( a ) 0 . 0 ( 1 ) ( 2 ) ( 3 ) ( 4 ) fr4 pcb, mounting pad for cathode 6 cm 2 t j = 150 c (1) = 1; dc (2) = 0.5; f = 20 khz (3) = 0.2; f = 20 khz (4) = 0.1; f = 20 khz fig. 22. schottky diode: average forward current as a function of ambient temperature; typical values 11. test information t 1 t 2 p t 0 0 6 a a a 8 1 2 d u t y c y c l e = t 1 t 2 fig. 23. duty cycle definition
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 13 / 16 12. package outline 1 0 - 0 5 - 3 1 d i m e n s i o n s i n m m 0 . 0 4 m a x 0 . 6 5 m a x 0 . 7 7 0 . 5 7 ( 2 ) 0 . 5 4 0 . 4 4 ( 2 ) 2 . 1 1 . 9 2 . 1 1 . 9 1 . 1 0 . 9 0 . 3 0 . 2 0 . 6 5 ( 4 ) 0 . 3 5 0 . 2 5 ( 6 ) 4 3 1 6 fig. 24. package outline dfn2020-6 (sot1118) 13. soldering s o t 1 1 1 8 _ f r d i m e n s i o n s i n m m s o l d e r p a s t e s o l d e r r e s i s t o c c u p i e d a r e a s o l d e r l a n d s 0 . 4 9 0 . 4 9 0 . 6 5 0 . 6 5 0 . 8 7 5 0 . 8 7 5 2 . 2 5 0 . 3 5 ( 6 ) 0 . 3 ( 6 ) 0 . 4 ( 6 ) 0 . 4 5 ( 6 ) 0 . 7 2 ( 2 ) 0 . 8 2 ( 2 ) 1 . 0 5 ( 2 ) 1 . 1 5 ( 2 ) 2 . 1 fig. 25. reflow soldering footprint for dfn2020-6 (sot1118) 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes PMFPB8032XP v.1 20121221 product data sheet - -
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 14 / 16 15. legal information 15.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nxp does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 15 / 16 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PMFPB8032XP 20 v, 3.7 a / 320 mv vf p-channel mosfet-schottky combination PMFPB8032XP all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved product data sheet 21 december 2012 16 / 16 16. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 test information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 ? nxp b.v. 2012. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 21 december 2012

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